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前言本文讨论了“Te溶剂法”制备的Hg_(1-x)Cd_xTe晶体中产生晶体横向组份分布分散性的主要原因。为了改善这种分散性,选取样品温度～600~C,Hg源温度～460—370℃,退火热处理12天的条件,对不同样品在负Hg压下进行高温退火热处理。电子探针显微分析结果表明,样品横向组份的最大偏差和平均偏差均有所降低,其中Cd克分子数的平均偏差由退火前的0.005克分子数降低为0.002克分子。同时还给出当Hg源温度≤300℃时退火处理的一些实验结果并作了简单的讨论。
Preface This paper discusses the main reason for the distributional dispersibility of the cross-section of the crystal in Hg_ (1-x) Cd_xTe prepared by the “Te solvent method”. In order to improve the dispersibility, the sample temperature of 600 ~ C, Hg source temperature of ~ 460-370 ℃, annealing heat treatment for 12 days, the different samples were annealed at a high Hg pressure. The results of electron probe microanalysis showed that the maximum deviation and the average deviation of the transverse components decreased, and the average deviation of the Cd molar number from 0.006 mol to 0.002 mol before annealing. At the same time, some experimental results of anneal at Hg source temperature ≤300 ℃ are given and discussed briefly.