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利用InAs_(0.15)Sb_(0.85)/InSb应变层超晶格(SLS)制造了一种高探测率的红外光电二极管。经表面钝化的器件在波长小于等于10μm时探测率大于等于1×10~(10)cmHz~(1/2)W~(-1)。这种器件证明了在InAsSb应变层超晶格基础上制造长波红外光伏探测器的可行性。
A high detection rate of infrared photodiode was fabricated by using InAs_ (0.15) Sb_ (0.85) / InSb strained layer superlattice (SLS). The surface passivation of the device at a wavelength of less than or equal to 10μm detection rate greater than or equal to 1 × 10 ~ (10) cmHz ~ (1/2) W ~ (-1). This device demonstrates the feasibility of fabricating a longwave infrared photovoltaic detector based on the InAsSb strained superlattice.