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基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率(f_T)和最大振荡频率(f_(max))的InAlN/GaN异质结场效应晶体管(HFETs).基于再生长n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600nm.此外,采用自对准栅工艺制备60nmT型栅.由于器件尺寸的缩小,在Vgs=1V时,器件最大饱和电流(Ids)达到1.89A/mm,峰值跨导达到462mS/mm.根据小信号测试结果,外推得到器件的f_T和f_(max)分别为170GHz和210GHz,该频率特性为国内InAlN/GaNHFETs器件频率的最高值.
InGaN heterojunction field effect transistors (HFETs) with high current gain cut-off frequency (f_T) and maximum oscillation frequency (f max) were fabricated based on sapphire InAlN / GaN heterojunction bulk materials. GaN ohmic contact process to achieve the device size reduction, effective source drain spacing (Lsd) reduced to 600nm. In addition, the use of self-aligned gate technology to prepare 60nmT gate. Due to the device size reduced, the device maximum saturation at Vgs = 1V The current Ids reaches 1.89A / mm and the peak transconductance reaches 462mS / mm. According to the result of small signal test, the f_T and f_max of extrapolated devices are 170GHz and 210GHz, respectively. The frequency characteristics are the domestic InAlN / GaNHFETs The highest frequency.