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《IEEE EDL》1992年3月报道了美国休斯研究实验室截止频率达300GHz的65nm自对准栅PM—Al_(0.48)In_(0.52)As/Ga_(0.20)In_(0.80)As HEMT的工作。 为了提高FET器件的使用频率范围和工作速度,一般采用降低栅长的办法。但是当栅长进入亚0.1 μm区域以后,单靠缩小栅长已不能提高器件的截止频率和工作速度,寄生效应成了限制本征速度的主要问题。近期工作表明,对于栅长小于0.1 μm的FET,提高跨导可以改善
In March 1992, IEEE EDL reported the work of a 65-nm self-aligned gate PM-Al 0.48 In 0.52 As / Ga 0.20 In 0.80 As HEMT with a cutoff frequency of 300 GHz at Hughes Research Laboratories in the U.S.A. . In order to improve the frequency range and operating speed of the FET device, a method of reducing the gate length is generally adopted. However, when the gate length is in the sub-0.1 μm region, the reduction of the gate length alone can not increase the cut-off frequency and operating speed of the device, and the parasitic effect becomes a major problem limiting the intrinsic speed. Recent work has shown that improving the transconductance can be improved for FETs with a gate length of less than 0.1 μm