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报道了一款采用0.25μm GaAs功率MMIC工艺研制的Ku波段功率放大器芯片。芯片采用三级放大拓扑结构,末级输出匹配电路按照高效率设计,同时优化前后级推动比控制前级电流。级间采用有耗匹配电路设计,提高大信号状态下的稳定性。在16~18GHz频带范围内漏压8.5V、脉宽1μs、占空比40%的工作条件下线性增益大于25dB;饱和输出功率大于12 W,饱和效率大于32%,功率增益大于21dB,功率增益平坦度小于±0.5dB。芯片尺寸为3.5mm×4.6mm。
Reported a Ku-band power amplifier chip developed using 0.25μm GaAs power MMIC process. The chip uses three amplifier topology, the final output matching circuit design in accordance with the high efficiency, while optimizing before and after the level of control than the previous stage of current control. Between the level of consumption matching circuit design to improve the stability of the large signal state. The linear gain is more than 25dB when the drain voltage is 8.5V, the pulse width is 1μs and the duty cycle is 40% in the frequency range of 16-18GHz; the saturated output power is greater than 12W, the saturation efficiency is greater than 32%, the power gain is greater than 21dB, the power gain Flatness less than ± 0.5dB. The chip size is 3.5mm × 4.6mm.