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本文研究了As-Se非晶态半导体光电导与光强的关系,及光电导瞬态过程.发现瞬态光电导具有前冲、峰值;并且σ_(?)与G的关系有非线性等反常现象.作者用As-Se非晶态半导体的结构弛豫与缺陷组态间的关系进行分析,解释了实验结果.
In this paper, the relationship between photoconductivity and light intensity of As-Se amorphous semiconductor and the transient process of photoconductance have been investigated. It is found that transient photoconductivity has a forward impulse and a peak value. The relationship between σ_ (?) And G has nonlinear anomalies Phenomenon.The author uses As-Se amorphous semiconductor structure relaxation and defect configuration analysis of the relationship between the interpretation of the experimental results.