论文部分内容阅读
采用脉冲激光沉积方法 (PLD)制备了Au/PZT/BIT/p Si结构铁电存储二极管 .对其铁电性能和存储特性进行了实验研究 .铁电性能测试显示较饱和的、不对称的电滞回线 ,其剩余极化和矫顽场分别约为 1 5 μC/cm2 和 48kV/cm ;1 0 9次开关极化后剩余极化和矫顽场分别仅下降 1 0 %和增加 1 2 % ;观察到源于铁电极化的C V和I V特性回线 ;电流密度 + 4V电压下为 6 .7× 1 0 -8A/cm2 ;在 + 2V的读电压下 ,读“1”和读“0”电流有 0 .0 5 μA的明显差别 ;保持时间达 30min以上 .
The ferroelectric storage diodes of Au / PZT / BIT / p Si structure were fabricated by pulsed laser deposition (PLD), and their ferroelectric properties and storage characteristics were experimentally studied. The ferroelectric performance test shows that the more saturated and asymmetric electric Hysteresis curve, the remanent polarization and coercive field are about 15μC / cm2 and 48kV / cm, respectively. The remanent polarization and coercive field decrease only by 10% and increase by 12 after 1 0 9 switching polarizations %; Loop back CV and IV characteristics originating from ferroelectric polarization were observed; current density was 6.7 × 10 -8 A / cm 2 at a voltage of +4 V; reading “1” and reading “ 0 ”current has a significant difference of 0. 05 μA; hold time up to 30min.