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Developing efficient electron transport layers (ETLs) along with proper interface engineering is crucial to achieve high-performance perovskite solar cells (PSCs).Herein,a photo-assisted doping strategy was developed to modify SnO2 ETLs with Cl-for efficient PSCs.The Cl-modified SnO2 (Cl-SnO2) with passivated surface defects as ETL material favors the formation of high phase-purity per-ovskite films and promotes the electron collection across the SnO2/perovskite interface.Consequently,the efficiency of PSC is improved from 16.35％ without Cl modification to 18.94％ with the Cl modification,with little hysteresis and high stability.