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日本富士通研究所研究成功了能用一次液相外延法获得隐埋结构的VSB(V型槽衬底隐埋异质结)InGaAsP/InP激光器。1μm波段的激光二极管的光纤传输损失低,且处于低分散波长区,研究进展是很迅速的,但与0.8μm波段相比,阈值电流的温度特性不好,难于在高温工作。因此各研究所都提出了通过降低阈值电流和阈值电流密度以及功耗从而控制温度上升的隐埋结构。但由于是用化学
The Fujitsu Research Institute of Japan has successfully researched the InGaAsP / InP VSG (V-groove buried heterojunction) InGaAsP / InP laser capable of obtaining a buried structure by a liquid-phase epitaxy. However, compared with the 0.8μm wavelength band, the temperature characteristic of the threshold current is not good and it is difficult to work at high temperature. However, the laser diode in the 1μm wavelength band has low optical transmission loss and is in a low dispersion wavelength range. Therefore, each institute has proposed a buried structure that controls the temperature increase by reducing the threshold current and threshold current density and power consumption. But because of the use of chemistry