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Forward gated-diode Recombination-Generation(R-G) current method is appliedto an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easybut accurate experimental method can directly give stress-induced average interface traps forcharacterizing the device’s hot carrier characteristics. For the tested device, an expected powerlaw relationship of ΔAN_(it)～t~(0.787) between pure stress-induced interface traps and accumulatedstressing time is obtained.
Forward gated-diode Recombination-Generation (RG) current method is applied to an NMOSFET / SOI to measure the stress-induced interface traps in this letter. This easy-to-beat accurate experimental method can directly give stress-induced average interface traps for characterizing the device’s hot carrier characteristics For the tested device, an expected powerlaw relationship of ΔAN_ (it) ~ t ~ (0.787) between pure stress-induced interface traps and accumulated staging time is obtained.