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本文扼要叙述用直流溅射法制备具有较高电阻,C轴取向好的ZnO压电薄膜的方法.沉积条件为:溅射电流密度J=1.2—1.5毫安/厘米~2,溅射气压P=6×10~(-2)—1×10~(-1)毛,基片温度Ts=160—280℃,沉积速率V=0.1—0.4微米/小时,得到的薄膜洁净透明,分散度α<6°,偏离度M≤3°,电阻率ρv=105—10~7欧-厘米,粒度300—500埃.并探索了温度,基片位置,气体组分对薄膜性能的影响.
In this paper, a method of preparing a ZnO piezoelectric thin film with high resistance and good C-axis orientation by direct current sputtering is described briefly. The deposition conditions are: sputtering current density J = 1.2-1.5 mA / cm 2, sputtering pressure P = 6 × 10 ~ (-2) -1 × 10 ~ (-1) hairs, substrate temperature Ts = 160-280 ℃ and deposition rate V = 0.1-0.4μm / h, the obtained film is clean and transparent with dispersion α <6 °, degree of deviation M≤3 °, resistivity ρv = 105-10 ~ 7 Ω-cm and particle size of 300-500 Å. The influences of temperature, substrate position and gas composition on the properties of the films were also investigated.