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美国能源部ORNL国家实验室的研究者们将一种新型合成工艺和商用电子束光刻技术结合起来,在单一纳米级厚度的半导体晶体内实现了一种随机图案的二维半导体异质结阵列。该工艺主要技术是将目前采用的单层晶体的图形区域改造成其他形态。研究者们首次在衬底上生长出了单层纳米级别厚度的MoSe2晶体,并利用标准
Researchers at the US Department of Energy’s ORNL National Laboratory have combined a new synthesis process with commercial electron beam lithography to implement a random pattern of two-dimensional semiconductor heterostructure arrays within a single nanometer-thick semiconductor crystal . The main technique of this process is to transform the currently used single crystal area of the figure into other forms. For the first time, researchers have grown MoSe2 crystals of single-layer nanoscale thickness on a substrate and made use of the standard