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本文介绍了新型SOI(硅绝缘膜)结构,用来解决电荷耦合器件(CCD)结构无法解决的拖尾问题(局部强光照射时,在画面的上下部位出现白带的现象)。SOI技术可以成为实观三维器件的基础技术。文中个绍SOI摄象器件的构造和激光再结晶技术的试制方法,给出了试制器件的测试结果,并展望了未来的研究课题。
This paper presents a new SOI (silicon-on-insulator) structure to solve the trailing problem that can not be solved by the CCD structure (leucorrhea occurs at the upper and lower parts of the screen when the local light is irradiated). SOI technology can become the foundation of real 3D devices. In this paper, the construction of SOI camera device and the trial production of laser recrystallization technology are introduced. The test results of the prototype device are given, and the future research topics are also prospected.