论文部分内容阅读
通过研究超薄Ni0.86Pt0.14金属硅化物薄膜的特性,提出采用310℃/60 s与480℃/10 s两步快速热退火(RTA)的工艺方案,形成的Ni(Pt)硅化物薄膜电阻率最小,均匀性最好,且在600℃依然保持形态稳定。应用此退火条件,Ni0.86Pt0.14在0.5μm和22 nm CMOS结构片中形成覆盖均匀且性能良好的金属硅化物薄膜,同时没有形成任何尖峰。对于更薄的硅化物,实验结果表明,2 nm Ni0.86Pt0.14形成的超薄硅化物界面平整,均匀性好,没有在界面出现Ni0.95Pt0.05金属硅化物的“倒金字塔形”尖峰。结果显示,比较在有、无氩离子轰击的硅表面形成的两种Ni(Pt)Si硅化物薄膜,后者比前者电阻率约低10%~26%,该工艺有望在未来超薄硅化物制作被广泛应用。
By studying the characteristics of the ultrathin Ni0.86Pt0.14 metal silicide films, a two-step rapid thermal annealing (RTA) process at 310 ℃ / 60 s and 480 ℃ / 10 s was proposed. The Ni (Pt) silicide films Resistivity is the smallest, best uniformity, and remains stable at 600 ℃. Using this annealing condition, Ni0.86Pt0.14 formed uniform and well-behaved metal silicide films in 0.5μm and 22 nm CMOS structure slices without any spikes. For the thinner silicide, the experimental results show that the interface of the ultrathin silicide formed at 2 nm Ni0.86Pt0.14 is flat and uniform, and there is no “pyramid” of Ni0.95Pt0.05 metal silicide at the interface. "peak. The results show that comparing with the former, the resistivity of the two Ni (Pt) Si silicide films is about 10% ~ 26% lower than that of the former with argon ion bombardment. The proposed method is promising for the future ultrathin silicide Production is widely used.