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本文研究中间退火处理对薄SiO_2膜电击穿特性和高频电容-电压特性的影响。结果表明,在温度θ=950～1100℃和时间t=0～90分钟范围内,薄SiO_2膜的缺陷密度和固定电荷密度随中间退火温度升高和时间增长而减少。与常规后退火比较,中间退火能更有效地改善干氧氧化膜的电击穿特性,也能改善湿氧氧化膜和TCE氧化膜的电击穿特性。经中间退火处理的干氧氧化膜,其固定电荷密度也稍有降低。
In this paper, the effects of intermediate annealing on the electrical breakdown characteristics and high frequency capacitance-voltage characteristics of thin SiO_2 films were investigated. The results show that the defect density and the fixed charge density of the thin SiO_2 film decrease with the increase of the intermediate annealing temperature and the increase of the time at the temperature of θ = 950 ~ 1100 ℃ and the time t = 0 ~ 90 minutes. Compared with the conventional post-annealing, the intermediate annealing can improve the electrical breakdown characteristics of the dry oxide film more effectively and also improve the electrical breakdown characteristics of the wet oxide film and the TCE oxide film. The dry oxide film annealed by intermediate annealing also has a slightly lower fixed charge density.