Effects of stress conditions on the generation of negative bias temperature instability-associated i

• 作 者: 张月 蒲石 雷晓艺 陈庆 马晓华 郝跃
• 机 构: School of Microelectronics, Xidian University,State Key Discipline Laboratory of Wide Bandgap Semico
• 出 处: Chinese Physics B
• 发表日期: 2013年11期
• 关键词: exponent instability normalized varied resultant independence reflected divergen

The exponent n of the generation of an interface trap(Nit),which contributes to the power-law negative bias temperature instability(NBTI)degradation,and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vgand temperature T.It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vgand T.The time evolution of the exponent n is affected by the stress conditions,which is reflected in the shift of the onset of the diffusion-limited phase.According to the diffusion profiles,the generation of the atomic hydrogen species,which is equal to the buildup of Nit,is strongly correlated with the stress conditions,whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.

The exponent n of the generation of an interface trap (Nit), which contributes to the power-law negative bias temperature instability (NBTI) degradation, and the exponent’s time evolution are investigated by simulations with varying the stress voltage Vgand temperature T.It is found that the exponent n in the diffusion-limited phase of the degradation process is irrelevant to both Vgand T. The time evolution of the exponent n is affected by the stress conditions, which is reflected in the shift of the onset of the diffusion-limited phase.According to the diffusion profiles, the generation of the atomic hydrogen species, which is equal to the buildup of Nit, is strongly correlated with the stress conditions, whereas the diffusion of the hydrogen species shows Vg-unaffected but T-affected relations through the normalized results.