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Fe- O/A1Ox /Fe-O tunnel junctions were prepared by reactive magnetron sputtering under mired working gas Ar+2%O2. The insulating AlOx layer of 1-2nm thickness was sputtered directly from Al2O3 target. Electrode layers were made of 80at. % iron and 20at.% oxygen. Bottom Fe-O electrode deposited on glass substrate annealed at 473K at the pressure of 3×10~(-4)Pa for an hour shows disparate crystalline grain structure, lower electrical resistance and coercivity compared to the as-deposited top elect rode. Only crystalline structrure of a-Fe is observed in both electrodes. Large tunnel magneoresistance in large Fe-O/AlOx/Fe-O junctions of 1cm2 is observed at room temperature and the I-V characteristic curve of the junction shows that the barrier of the junction is of high quality.
Fe-O / AlOx / Fe-O tunnel junctions were prepared by reactive magnetron sputtering under mired working gas Ar + 2% O2. The insulating layer of AlOx of 1-2 nm was sputtered directly from Al2O3 target. Electrode layers were made of 80at. % iron and 20 at.% oxygen. Bottom Fe-O electrode deposited on glass substrate annealed at 473 K at the pressure of 3 × 10 -4 Pa for an hour shows disparate crystalline grain structure, lower electrical resistance and coercivity compared to the As-deposited top elect rode. Only Large-sized tunnel magneoresistance in large Fe-O / AlOx / Fe-O junctions of 1 cm 2 is observed at room temperature and the IV characteristic curve of the junction shows that the barrier of the junction is of high quality.