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自从石墨电弧放电制备克量级C_(60)的方法发现以来,研究不同衬底上C_(60)薄膜的生长行为就一直是科学家关注的热点之一.制备高质量的C_(60)薄膜,不仅在基础研究方面,而且在应用方面都具有重要的意义.例如,对于碱金属掺杂的C_(60)超导体,利用高质量的C_(60)单晶薄膜可以获得较窄的超导转变温区和较高的转变温度.此外高质量的C_(60)单晶薄膜对于研究由C_(60)和金属或半导体组成的双层膜或多层膜的非线性光学性能也具有重要的意义.C_(60)薄膜在不同衬底上的生长行为与许多因素有关,其中最重要的是衬底表面的原子排布是否与C_(60)的晶格相匹配,C_(60)与衬底之间是否存在电荷转移和是否存在键合.迄今为止,许多研究工作报
It has been one of the hot topics for scientists to study the growth behavior of C_ (60) thin films on different substrates since the graphite arc discharge was used to prepare gram-level C_ (60) .High quality C_ (60) For example, for the C 60 superconductor doped with alkali metal, the narrow superconducting transition temperature can be obtained by using the high quality C 60 single crystal thin film, which is not only in the basic research but also in the application. Region and higher transition temperature.High quality C 60 single crystal film is also of great significance to study the nonlinear optical properties of bilayers or multilayer films composed of C 60 and metal or semiconductor. The growth behavior of C_ (60) thin films on different substrates depends on many factors, of which the most important is whether the atomic arrangement on the substrate matches the lattice of C_ (60) There is a charge transfer and whether there is a bond between them, and so far many studies have reported