论文部分内容阅读
重离子实验结果表明,具有高线性能量转移(LET)或大角度入射的快重离子导致静态随机存储器(SRAM)中的多位翻转(MBU)比例增大,甚至超过单位翻转比例。单个离子径迹中的电荷可以沿着径向扩散数个微米,被临近的灵敏区收集后引起MBU。器件灵敏区的各向异性空间布局与离子入射方向共同影响测试器件的MBU图形特征。位线接触点的纵向隔离导致横向型成为主要的两位翻转图形;“L”型和“田”型分别是主要的三位翻转和四位翻转图形。最后,对SRAM抗MBU加固设计和实验验证方法进行了讨论。
The results of heavy ion experiments show that fast heavy ions with high linear energy transfer (LET) or high incidence angle lead to the increase of multi-bit flip (MBU) ratio in static random access memory (SRAM) even exceeding the unit flip ratio. The charges in a single ion track can diffuse radially by several microns and are trapped by adjacent sensitive zones to cause MBU. The anisotropic spatial layout of the sensitive area of the device and the direction of ion incident jointly affect the MBU pattern characteristics of the test device. Longitudinal isolation of the bit line contact results in the lateral pattern becoming the dominant two-position flip pattern; the “L” and “Field” patterns are the major three-position flip and four-position flip patterns, respectively. Finally, the SRAM anti-MBU reinforcement design and experimental verification methods are discussed.