论文部分内容阅读
介绍了微米级台阶高度样块的重要作用和国内外研制现状。为了研制出表面质量好的台阶高度标准样块,设计了不同的刻蚀工艺方案。通过对不同刻蚀工艺制作出样块的均匀性、表面粗糙度和平行度进行比较,确定标称高度为2~10μm的样块选用反应离子刻蚀(RIE),标称高度为20~100μm的样块选用深反应离子刻蚀(DRIE)和湿法刻蚀相结合的工艺。为防止样块氧化,对样块溅射了90 nm的金属铬。对标称高度10μm样块质量参数进行评价。结果表明:表面粗糙度为0.4 nm、平行度为0.5°、均匀性为1.3 nm,优于美国VLSI公司同种材料制作的标称高度为8μm的样块。
The important role of micrometer-scale step height samples and the status quo at home and abroad are introduced. In order to develop a good surface quality of the standard height of the block, designed a different etching process. By comparing the uniformity, surface roughness and parallelism of the samples made by different etching processes, it is determined that reactive ion etching (RIE) is used for the samples with the nominal height of 2 to 10 μm and the nominal height is 20 to 100 μm The sample selection of deep reactive ion etching (DRIE) and wet etching process combined. To prevent oxidation of the sample, the sample was sputtered with 90 nm of metallic chromium. The nominal height of 10μm sample quality parameters were evaluated. The results show that the surface roughness is 0.4 nm, the parallelism is 0.5 ° and the uniformity is 1.3 nm, which is better than the nominal height of 8μm fabricated by the same kind of material from VLSI Company.