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实验证明,经双吸除和本征吸除两种工艺处理后,硅片的机械强度有较大增加。从而可以认为硅片中引入的高密度层错和位错网络将对硅片的碎裂起阻止作用
Experiments show that after double suction and suction aspiration two processes, the mechanical strength of silicon has increased greatly. Thus it can be considered that the introduction of high-density layer faults and dislocation networks in the silicon wafer will prevent the fragmentation of the silicon wafer