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掩模制备是硅各向同性刻蚀中的一项重要工艺。要实现深刻蚀,掩模必须满足结构致密、强度大及抗腐蚀性好的要求。一般光刻胶掩模无法在刻蚀液中较长时间地保持其掩蔽性能,很难实现深刻蚀;而金属掩模也容易出现针孔及裂纹等缺陷。因此提出使用Su-8负性光刻胶结合铬金属制备多层掩模。这种掩模结构制备工艺简单,经济实用;提高了掩模在高速刻蚀时的掩蔽性能,实现了深刻蚀。实验表明,其能满足300μm以上深刻蚀的要求,可用于硅及玻璃等材料的微加工。
Mask preparation is an important process for the isotropic etching of silicon. To achieve deep etching, the mask must meet the requirements of dense structure, high strength and good corrosion resistance. Generally, the photoresist mask can not maintain its masking performance for a long time in the etchant, making it hard to realize deep etching. The metal mask is also prone to defects such as pinholes and cracks. Therefore, the use of Su-8 negative photoresist in combination with chrome metal mask is proposed. The preparation method of the mask structure is simple, economical and practical, improves the masking performance of the mask during high-speed etching, and realizes deep etching. Experiments show that it can meet the deep etching requirements of 300μm and above. It can be used for the micro-machining of materials such as silicon and glass.