【摘 要】
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The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray diffraction and photolumines
【机 构】
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School of Physics and Center for Wide Band-Gap Research, Peking University, Beijing 100871“,”State K
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The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample.The effects of the dopants on the, etching pits were discussed.
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