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含氮 CZ硅的电学性能完全有别于含氮的 FZ硅和无氮的 CZ硅 .研究表明 ,含氮 CZ硅能形成一种与氮有关的新施主 ,它随氮氧复合物的形成而形成 ,随氮氧复合物的消失而消失 .文章进一步研究了氮 -新施主的形成和消除与热处理条件的关系 ,并对这些实验结果进行了探讨
The electrical properties of nitrogen-containing CZ silicon are completely different from nitrogen-containing FZ silicon and nitrogen-free CZ silicon.The results show that nitrogen-containing CZ silicon can form a new nitrogen-related donor, with the formation of nitrogen and oxygen complexes And disappeared with the disappearance of the oxynitride complex.The relationship between the formation and elimination of nitrogen-new donors and the heat treatment conditions was further studied and the results of these experiments were discussed