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在不同的环境氧压下用脉冲激光沉积方法在Si(111)衬底上生长了ZnO薄膜,以325 nm He-Cd激光器为激发源获得了薄膜的荧光光谱以研究其发光特性,用X射线衍射仪(XRD)和原子力显微镜(AFM)研究了薄膜的晶体结构和表面形貌,结果表明氧压在20 Pa和50Pa之间制备的ZnO薄膜具有良好的紫外发光特性和较好的晶体质量。分析了ZnO薄膜的发光机理,认为薄膜紫外峰源自自由激子复合发光,绿光峰的发光机制与锌位氧OZn关系密切,氧空位是蓝光发射的重要原因。
ZnO films were grown on Si (111) substrates by pulsed laser deposition under different ambient oxygen pressures. Fluorescence spectra of the films were obtained by using a 325 nm He-Cd laser as excitation source to study their luminescent properties. X-ray The crystal structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results show that ZnO thin films with oxygen pressure between 20 Pa and 50 Pa have good UV luminescence properties and good crystal quality. The mechanism of luminescence of ZnO thin films is analyzed. It is considered that the ultraviolet peak of the film originates from the free exciton recombination luminescence. The emission mechanism of the green peak is closely related to the zinc oxygen OZn. The oxygen vacancies are the important reasons for the blue emission.