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采用射频磁控共溅射法在硅衬底上沉积Cu/SiO2复合薄膜,然后在NH3保护下高温退火,再于空气中自然冷却氧化,形成CuO结构,对其微观结构进行分析。随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高。样品于900℃和1 100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙,后者由片融状小颗粒融合而成,颗粒表面比较光滑。
The Cu / SiO2 composite films were deposited on silicon substrates by radio frequency magnetron sputtering. Then the films were annealed at high temperature under the protection of NH3 and then naturally cooled and oxidized in air to form CuO structure. The microstructure of the films was analyzed. With the increase of annealing temperature, CuO gradually transformed from monoclinic phase to cubic phase, and the quality of CuO films increased. The samples were annealed at 900 ℃ and 1 100 ℃ to form orderly micron-sized particles. The former consisted of granular clusters with rough surface. The latter was composed of small pieces of melted pellets and the surface of the particles was relatively smooth.