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本文通过建立发射区两区模型,对多晶硅膜改善薄发射区晶闸管开通特性的机理进行了分析,结果表明:基区注入的少子在多晶硅区运动受障碍导致等效薄发射极晶体管的电流增益提高;多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.管芯测试结果亦表明,由于多晶硅膜的作用,薄发射区晶闸管的开通特性并未因发射区很薄而受影响.
In this paper, the mechanism of the polysilicon film to improve the thyristor turn-on characteristics of the thin emitter region is analyzed by setting up the two-emitter model of the emitter region. The results show that the current gain of the equivalent thin emitter transistor is increased due to the obstruction of mobility in the polysilicon region The low carrier mobility and lifetime of the polysilicon film are two key parameters for increasing the current gain.The die test results also show that the opening characteristics of the thin emitter thyristor are not affected by the thin emitter region due to the effect of the polysilicon film.