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Epitaxial growth and structural characteristics of metastableβ-In2Se3 thin films on H-terminated Si(111) substrates are studied. The In2Se3 thin films grown below theβ-to-α phase transition temperature (453 K) are characterized to be strainedβ-In2Se3 mixed with significantγ-In2Se3 phases. The pure-phased single-crystallineβ-In2Se3 can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In2Se3 within the phase equilibrium temperature window ofβ-In2Se3. It is suggeted that the observedγ-to-β phase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In2Se3 thin-film system at a state far from thermodynamic equilibrium.