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氢在GaN薄膜制备工艺中扮演很重要的角色,氢主要有两个来源,一是载气氢,另一个来源是从TMG气源本身离解出来的氢产物。本文研究了电子回旋共振-等离子体增强化学气相沉积(ECR-PECVD)沉积GaN薄膜工艺中从TMG离解出来的氢产物及其对薄膜生长环境的影响。实验分别采用N_2和TMG作为N源和Ga源,衬底为(0001)面α-Al_2O_3。实验的结果表明从TMG中离解出来的氢产物的数量会随着微波功率的增加而增加,特别是当微波功率大于500 W时离解氢的数量增加更明显,但是这种增加还不足以改变PECVD沉积GaN薄膜过程中本来的富镓生长环境。
Hydrogen plays a very important role in the GaN thin film fabrication process. There are two main sources of hydrogen, one is carrier gas hydrogen and the other is hydrogen product dissociated from TMG gas source itself. In this paper, the hydrogen products dissociated from TMG during electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) deposition of GaN thin films and their effects on the growth of thin films were investigated. N_2 and TMG were used as N source and Ga source, respectively, and the substrate was (0001) α-Al_2O_3. The experimental results show that the amount of hydrogen product dissociated from TMG increases with increasing microwave power, especially when the microwave power is greater than 500 W, but the increase is not enough to change the PECVD The original gallium-rich growth environment during the deposition of GaN films.