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本文研究了低温生长分子束外延GaAs薄膜的光电子性质．我们测量了它的I-V特性；用电调制透射谱测量了电吸收和电折变，并由此分析了它的带边共振吸收平方电光效应；用二波混合的方法测量了它的光折变性质．对两种方法得到的电吸收和电折变作了分析比较．
In this paper, the optoelectronic properties of GaAs thin films grown by low temperature growth molecular beam were studied. We measured its IV characteristics; measured by electrical modulation transmission spectra of electrical absorption and electrical refraction, and thus its edge-band resonance absorption square photoelectric effect; measured by two-wave hybrid photoluminescence nature. The two methods of the electric absorption and electric refraction were analyzed and compared.