低亚阈值摆幅铝掺杂二氧化铪铁电材料金属-铁电层-绝缘层-半导体场效晶体管研究

• 作 者: 吴迪 徐永珍 姜毅 刘会刚
• 机 构: 南开大学电子信息与光学工程学院,天津300071;台湾清华大学电子工程研究所,台湾新竹30013;台湾清华大学电子工程研究所,台湾新竹30013;南开大学电子信息与光学工程学院,天津300071
• 出 处: 南开大学学报（自然科学版）
• 发表日期: 2021年2期
• 关键词: ferroelectric Al-doped HfO2 subthreshold swing MFIS-FET

首次制备了完全CMOS工艺兼容的铝掺杂二氧化铪铁电材料金属-铁电层-绝缘层-半导体场效晶体管,并对其电学特性,如I-V,C-V等进行测量与分析,最终实现亚阈值摆幅为27 mV/decade的金氧半场效晶体管.栅极漏电流机制亦被探讨,并推断出Poole-Frenkel效应是产生铝掺杂二氧化铪铁电材料晶体管漏电流的主要原因.“,”The recently discovered HfO2-based ferroelectric materials have drawn much attention owing to their high CMOS-compatibility and scalability.A fully CMOS-compatible Al-doped HfO2-based metalferroelectric-insulator-semiconductor field-effect-transistor (MFIS-FET) was fabricated for the first time.The electrical properties,including I-V and C-V characteristics,of the MFIS-FET were characterized.A subthreshold swing of 27 mV/decade is achieved in the n-channel MFIS-FET with TiN/Al-doped HfO2/SiO2/Si gate stack.The gate leakage current was also addressed.It is derived that the Poole-Frenkel effect should be the conduction mechanism of the gate leakage current in the Al-doped HfO2-based MFISFET.