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为研究正装和倒装封装下高功率半导体激光器有源区的应力问题,利用有限元软件ANSYS分析得到了两种封装方式下应力场分布图及有源区平行于x轴路径上的应力变化曲线。模拟结果表明,与正装封装相比,倒装封装下有源区应力变化剧烈,平均值高出正装一个数量级。并通过荧光光谱实验对比了封装前后激光器芯片的波长变化,根据半导体禁带宽度与应变关系算出两种封装下的应力大小,与模拟值相符。通过模拟和实验结果可见,芯片封装形式对芯片引入的应力有显著的差别,倒装封装下芯片有源区应力远高于正装封装。
In order to study the stress of the active region of high power semiconductor lasers in both front-end and flip-chip packages, the stress field distribution of the two kinds of package modes and the stress curves of the active region parallel to the x-axis are obtained by finite element software ANSYS. . The simulation results show that the stress in the active region under flip-chip packaging changes dramatically compared with the regular package, and the average value is one order of magnitude higher than the standard one. Fluorescence spectra were used to compare the wavelength variations of the laser chips before and after encapsulation. The stress under both packages was calculated according to the relationship between the semiconductor band gap and the strain, which was consistent with the simulated values. Through simulation and experimental results, it can be seen that there is a significant difference between the chip packaging forms and the stress introduced by the chip. The stress in the active region of the chip under flip-chip packaging is much higher than that of the formal packaging.