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采用标准n阱硅栅等平面CMOS工艺,将耐压大于200V、吸收电流大于200mA的高压功率VMOS器件与工作在5V电源电压的CMOS控制电路兼容在同一个硅芯片上。分析了电路设计及工艺措施,证明这种技术可以低成本地制作各种低高压兼容电路。
Using standard n-well silicon gate and other planar CMOS technology, the high voltage power VMOS device with voltage greater than 200V and sink current greater than 200mA is compatible with the CMOS control circuit with 5V supply voltage on the same silicon chip. The circuit design and process measures are analyzed to demonstrate that this technology can produce a variety of low voltage compatible circuits at low cost.