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本文着重介绍了提高芯片内在质量的一套工艺方法:①从热动力学出发,用以减少和防止潜在缺陷的产生和增殖的几种低温技术:低温的一次氧化、基极和低浓度射极扩散技术;②从“动态”缺陷观点出发及金属杂质在不同凝聚相中的分凝行为而设置的几种吸除技术,即非电作用区的自吸除、Si片正、背面的外吸除;③强化各层介质膜的缀合膜复合体钝化技术。
This article focuses on a set of process to improve the inherent quality of the chip: ① starting from the thermodynamics, to reduce and prevent potential defects in the proliferation and proliferation of several low-temperature technology: a low temperature oxidation, base and low concentration emitter Diffusion technology; ② From the “dynamic” defect point of view and metal impurities in different coagulation phase of the condensation behavior of the set and several absorption techniques, that is, non-electrical self-absorption area, Si positive and negative absorption In addition; ③ strengthen each layer of the dielectric film conjugate membrane complex passivation technology.