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用真空电子束蒸镀的方法制备氧化铟锡(indiumtin oxide,ITO)薄膜,制作了以300nmITO为窗口层的新型AlGaInP红光LED。在氮气环境下,对LED样品进行了40s快速热退火处理。随着退火温度增加,LED的光强先上升后下降,电压先下降后上升,并且两者都在435℃达到最优值。通过霍尔测试研究退火对ITO薄膜电学特性的影响,发现这是由于ITO在经过435℃退火后,电阻率最小,载流子浓度最大,因而减小了ITO的体电阻和p型欧姆接触电阻,降低了LED工作电压,同时增加了ITO做为电流扩展层的电流扩展效果,提高了LED光强。
An indium tin oxide (ITO) thin film was prepared by vacuum electron beam evaporation, and a novel AlGaInP red LED with a 300 nm ITO as a window layer was fabricated. In a nitrogen environment, LED samples were rapidly annealed 40s. With the increase of annealing temperature, the light intensity of LED increased first and then decreased, the voltage decreased first and then increased, and both reached the optimal value at 435 ℃. The influence of annealing on the electrical characteristics of ITO thin film was investigated by Hall test. It was found that the ITO had the lowest resistivity and the highest carrier concentration after being annealed at 435 ℃, thus reducing the bulk resistivity of ITO and the p-type ohmic contact resistance , Reducing the LED operating voltage, while increasing the ITO as a current spreading layer current expansion effect, improve the LED light intensity.