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提出了快速热氮化二氧化硅膜技术界面氮化模型。由该模型认为，快速热氮化二氧化硅膜中固定电荷及界面态的变化是高温处理及氮化剂向界面扩散并在界面处参与反应两种过程造成的。高温处理带来固定电荷及界面态增大。而氮化剂在界面处的反应存在五种方式，这五种反应对固定电荷及界面态的影响各不相同：有的增大固定电荷，有的减少固定电荷；有的增大界面态，有的减少界面态。高温处理及这五种反应的综合结果，影响了快速热氮化二氧化硅膜中固定电荷及界面态。文中从这一模型出发，提出了关于固定电荷变化的计算公式。
A rapid thermal nitridation silicon dioxide film technology interface nitridation model was proposed. According to this model, the change of fixed charge and interfacial state in the rapid thermal nitriding silicon dioxide film is caused by the high temperature treatment and the diffusion of the nitriding agent into the interfacial surface and the participation in the reaction at the interfacial surface. High temperature treatment brings a fixed charge and the interface state increases. There are five ways to react nitrides at the interface. The five reactions have different effects on the charge and interface states: some increase the fixed charge and some decrease the fixed charge; others increase the interface state, Some reduce the interface state. The combined results of high temperature treatment and these five reactions affect the fixed charge and interface state in the rapidly thermal nitriding silicon dioxide film. Starting from this model, a formula for calculating the change of fixed charge is proposed in this paper.