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参考文献[1]和[2]曾用电中性近似作为迭代初值,计算了p-n型碲镉汞光伏探测器的稳态特性,并讨论了计算中所采用的特别设计的差分方法的稳定性问题。本文改用n-p型结构,并采用耗尽层近似作为迭代初值,除载流子分布、电势分布和伏安特性外,还增加计算了零偏压电阻R_0和结电容C_j及其随某些参量(底板厚度、载流子迁移率、结的陡缓)的变化。在工艺上,把n型层注入到p型碲镉汞比把p型层注入到n型碲镉汞要方便,并可减
References [1] and [2] used the neutral charge approximation as the initial value of iteration, and calculated the steady-state characteristics of the pn-type HgCdTe photovoltaic detector and discussed the stability of the specially designed differential method used in the calculation Sexual issues. Instead of carrier distribution, potential distribution and volt-ampere characteristics, the np-type structure is adopted and the depletion layer approximation is used as the initial value of the iteration. The zero offset resistance R_0 and the junction capacitance C_j are also calculated. Variation of the parameters (floor thickness, carrier mobility, sharpness of the junction). In the process, it is convenient to implant n-type layer into p-type HgCdTe than to implant p-type layer into n-type HgCdTe,