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A monolithically integrated 12V/5V switch capacitor DC|DC converter with structure|simplified main circuit and control circuit is presented.Its topological circuit and basic operating principle are discussed in detail.It is shown that elevated operating frequency,increased capacitance and reduced turn|on voltage of the diodes can make the converter’s output characteristics improved.Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher.As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial|parallel capacitance is optimized for the maximum output power.The device selection and its fabrication method are presented.A feasible integration process and its corresponding layout are designed.All active devices including switching transistors and diodes are integrated together with all passive cells including capacitors and resistor on a single chip based on BiMOS process,as has been verified to be correct and practical by simulation and chip test.
A monolithically integrated 12V / 5V switch capacitor DC | DC converter with structure | simplified main circuit and control circuit is presented. Itts topological circuit and basic operating principle are discussed in detail. It is shown that elevated operating frequency, an increased capacitance and reduced turn | on voltage of the diodes can make the converter’s output characteristics improved. Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher. As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial | parallel capacitance is optimized for the maximum output power. The device selection and its fabrication method are presented. A feasible integration process and its corresponding layout are designed. All active devices including switching transistors and diodes are integrated together with all passi ve cells including capacitors and resistors on a single chip based on BiMOS process, as has been verified to be correct and practical by simulation and chip test.