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本文叙述了一种新的高性能1.3μm InGaAsP半导体激光器,该器件实现了在有源区内的有效电流限制。它是在双异质晶片上刻出一对沟道来限定有源条形台面,再在台面两侧用LPE制作成一个P—n—P—n电流阻挡结构。因电流阻挡结构的改进,这种双沟平面隐埋异质结激光器(DC—PBH—LD)具有良好的激射性能。例如,外微分量子效率高达78%,电—光功率转换效率为43%,光输出功率在50mw以上。实验发现,增加P—复盖层掺杂浓度可使阈值电流温度敏感性明显降低,特征温度高达100k,直到130℃仍可CW(连续)工作。
This article describes a new high performance 1.3μm InGaAsP semiconductor laser that achieves effective current limiting in the active region. It is in the double heterogeneous wafer engraved a pair of channels to define the active strip table, and then on both sides of the table with LPE made of a P-n-P-n current blocking structure. Due to the improvement of the current blocking structure, the double-trench planar buried heterojunction laser (DC-PBH-LD) has good lasing performance. For example, external differential quantum efficiency up to 78%, electro-optical power conversion efficiency of 43%, optical output power of 50mw above. Experiments show that increasing the doping concentration of P-clad layer can significantly reduce the threshold current temperature sensitivity, the characteristic temperature of up to 100k, up to 130 ℃ can still CW (continuous) work.