Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates f

• 作 者: Satoru MATSUMOTO Yuji INO
• 机 构: Department of Electrical Engineering,Keio University,Japan,
• 出 处: Science China(Information Sciences)
• 发表日期: 2012年06期
• 关键词: sputtering preferred roughness compatible have crystalline magnetron Figure port

ZnO thin films were successfully grown on flexible plastic substrates using radio-frequency mag-netron sputtering method at room temperature.The effects of the sputtering power on the quality of the ZnO films have been investigated.The results show that thin films were polycrystalline,with wurtzite structure and a strong preferred c-axis orientation (002).The root-mean-square (rms) surface roughness of the ZnO thin films is 22.1 nm.The ZnO thin films fabricated by sputtering with 70 W sputtering power have a high mobility of 34.33 cm 2 /V·s.The ZnO films are shown to be compatible with flexible display on plastic substrates.

ZnO thin films were successfully grown on flexible plastic substrates using radio-frequency mag-netron sputtering method at room temperature. These effects of the sputtering power on the quality of the ZnO films have been investigated. The results show that thin films were polycrystalline, with The root-mean-square (rms) surface roughness of the ZnO thin films is 22.1 nm. The ZnO thin films fabricated by sputtering with 70 W sputtering power have a high mobility of 34.33 cm 2 /V.s.The ZnO films are shown to be compatible with flexible display on plastic substrates.