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采用简单的双台面工艺制作了完全平面结构的5个单元、10个发射极指大面积的SiGe HBT.器件表现出了良好的直流和高频特性,最大电流增益β为214.BVCEO为9V,集电极掺杂浓度为1×1017cm-3,厚度为400nm时,BVCBO为16V.在直流偏置下IC=30mA,VCE=3.0V得到fT和fmax分别为18.0GHz和19.3GHz,1GHz下最大稳定增益为24.5dB,单端功率增益为26.6dB.器件采用了新颖的分单元结构,在大电流下没有明显的增益塌陷现象和热效应出现.
A total of 5 units in a fully planar structure were fabricated using a simple dual-mesa technique, with 10 emitters referring to a large area SiGe HBT. The device exhibited good DC and high frequency characteristics with a maximum current gain of 214.BVCEO of 9V, The collector doping concentration is 1 × 10 17 cm -3 and the BVCBO is 16 V at a thickness of 400 nm. IC = 30 mA at DC bias, VCE = 3.0 V gives fT and fmax of 18.0 GHz and 19.3 GHz, respectively, and maximum stability at 1 GHz The gain is 24.5dB and the single-ended power gain is 26.6dB. The device features a novel sub-cell structure with no significant gain collapse and thermal effects at high currents.