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The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier n-MOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f max.The significant dependence of f T and f max on gate voltage and weak dependence on barrier height are demonstrated.Meanwhile,the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover,the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L2g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs,C gd and C ds.At ballistic transport limit the f T and f max are almost 10 times larger.The Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.
The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier n-MOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method RF performance with high values of f T and f max.. The significant dependence of f T and f max on gate voltage and weak dependence on barrier height are. Mianwhile, the significant dependence of gm and g ds on both gate voltage and SB height The scalarity of f T is outstanding and close to the ideal case (f T α 1 / L2g). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs, C gd and C ds.At ballistic transport limit the f T and f max are almost 10 times larger. The Scattering effects in nano-scale SB-nMOSFETs can not be neglected.