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5 功率模块的参数 5.1 功率MOSFET模块 5.1.1 最大定额 1)漏源电压Vns MOSFET芯片中,漏源极间的最大允许电压。此时,栅源回路为开路或有接入电阻。参数:壳温Tcase=25℃。 2)漏栅电压VDGR 漏栅极间的最大允许电
5 Power Module Parameters 5.1 Power MOSFET Module 5.1.1 Maximum Ratings 1) Drain-Source Voltage Vns MOSFET chip, the maximum allowable voltage between the drain and source. In this case, the gate-source loop is open or has an access resistance. Parameters: Case temperature Tcase = 25 ℃. 2) Drain gate voltage VDGR maximum allowable drain gate voltage