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Boron doped diamond(BDD)thin films have been deposited on Ti substrate with Ta interlayer by MP-CVD(microwave plasma chemical vapor deposition),and Ta interlayer was deposited by magnetron sputtering.The physical and electrochemical behaviors of the Ti/Ta/BDD electrode and its application in electrochemical oxidation of wastewater containing 2,4-dichlorophenol were studied.Raman spectroscopy and field emission scanning electron microscopy(FESEM)demonstrates that the films obtained exhibit well-defined diamond features.XRD spectroscopy shows no TiC in the BDD film with Ta interlayer.Electrochemical measurement shows the BDD electrode behaves low background current and wide working potential window up to 4 V.Further,the removal efficiency of chemical oxygen demand(COD)of the BDD electrodes were evaluated by the electrochemical oxidation of 2,4-dichlorophenol.
Boron doped diamond (BDD) thin films have been deposited on Ti substrate with Ta interlayer by MP-CVD (microwave plasma chemical vapor deposition), and Ta interlayer was deposited by magnetron sputtering.The physical and electrochemical behaviors of the Ti / Ta / BDD electrode and its application in electrochemical oxidation of wastewater containing 2,4-dichlorophenol were studied. Raman spectroscopy and field emission scanning electron microscopy (FESEM) demonstrates that the films obtained exhibit well-defined diamond features. XRD spectroscopy shows no TiC in the BDD film with Ta interlayer. Electrochemical measurement shows the BDD electrode behaves low background current and wide working potential window up to 4 V. Further, the removal efficiency of chemical oxygen demand (COD) of the BDD electrodes were evaluated by the electrochemical oxidation of 2,4 -dichlorophenol.