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本文介绍了非接触测量半导体晶片电参数的各种方法。由于非接触测量是非破坏性的、并且不引入新的缺陷,所以很有实际意义。它对难以形成电极的材料也能方便地加以测量。被测量量可以是电导率、迁移率、载流子的密度和寿命等。从测量原理上可分为电磁感应法,静电感应法和微波法,多数方法中需使用磁场。这些测量设备,除电阻率的测量已近实用外,其它尚没达到实用阶段。特别是位置分辨率(仅对所需要位置的特性进行测量的能力)多数还达不到要求,还有很大改进的余地。另外和接触法测得的数据相对照寻找其中关系上还需多下功夫。
This article describes various methods of non-contact measurement of electrical parameters of semiconductor wafers. Non-contact measurement is non-destructive, and does not introduce new defects, it is very practical. It is also easy to measure for difficult to form electrodes. Measured quantities can be conductivity, mobility, carrier density and lifetime. From the measurement principle can be divided into electromagnetic induction method, electrostatic induction method and microwave method, the majority of methods need to use the magnetic field. These measuring devices, in addition to the resistivity measurement is almost practical, the other has not yet reached the practical stage. In particular, the resolution of the position (the ability to measure only the characteristics of the desired location) still falls short of the requirements and there is still much room for improvement. In addition to contact with the data measured in contrast to find the relationship between the need to do more.