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极紫外光刻最有可能成为下世纪初批量生产线宽小于 0 1μm集成电路的技术 ,倍受世界各国 ,尤其是美国和日本两个集成电路生产大国的密切关注 ,近年来得到了飞速发展 .先后在极紫外光刻用无污染“碎片”激光等离子体光源、高反射率极紫外多层膜制备技术、面形精度达亚纳米表面粗糙度均方根值小于0 3nm的非球面超光滑表面加工与检测技术、无应力光学装校与调整、缺陷密度极小的反射式掩模、适于极紫外光曝光的表面成象光刻胶技术和稳定性达纳米量级工作台与对准精度达 15nm对准系统等关键技术上取得了重要进展 .已用极紫外光刻实验装置制作出线宽达 0 1μm的门电路 ,整个制作过程除光刻外 ,其他技术都是现有的集成电路制作技术 . 0 1μm线宽门电路研制成功表明极紫外光刻技术适合与现有其他技术相匹配 ,适合大批量生产 ,是现有光刻技术的合理延续 .我国在极紫外投影光刻各单元技术研究中有相当基础 ,在适当资助下 ,完全可以发展我国自己的极紫外投影光刻技术 .
EUV lithography is most likely to be mass-produced at the beginning of next century with a linewidth of less than 0 1μm integrated circuit technology, much closer attention by countries in the world, especially the United States and Japan, two large integrated circuit producing countries, has been rapid development in recent years EUV lithography with non-polluting “debris” laser plasma light source, high reflectance EUV multilayer film preparation technology, surface shape accuracy Diana nanometer surface roughness of less than 0 3nm of the aspheric surface of ultra-smooth surface processing and Detection technology, stress-free optical setup and adjustment, reflective mask with minimal defect density, surface-imaging resist technology for EUV exposure and stability Up to nanometer scale worktable with alignment accuracy up to 15 nm Alignment system and other key technologies have made important progress has been made using ultra-violet lithography experimental device line width of 0 1μm gate circuit, the entire production process except lithography, the other technologies are the existing integrated circuit fabrication technology. 0 The successful development of a 1μm linewidth gate shows that EUV lithography is suitable for compatibility with other existing technologies and is suitable for mass production, Reasonable continuation of our country in the EUV projection lithography unit technology research has a considerable foundation, with the appropriate funding, we can develop our own extreme ultraviolet projection lithography.