An MWCNT-doped SnO_2 thin film NO_2 gas sensor by RF reactive magnetron sputtering

• 作 者: 林伟 黄世震 陈文哲
• 机 构: College of Material Science and Engineering,Fuzhou University,College of Physics and Information Eng
• 出 处: 半导体学报
• 发表日期: 2010年02期
• 关键词: magnetron sputtering nanotube walled photoelectron attributed selectivity nanome

An MWCNT-doped(multi-walled carbon nanotube) SnO2 thin film NO2 gas sensor,prepared by radio frequency reactive magnetron sputtering,showed a high sensitivity to ultra-low concentrations of NO_2 in the parts per billion range.X-ray diffraction,X-ray photoelectron spectroscopy,and scanning electron microscopy(SEM) characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO_2 sensor,such as sensitivity,selectivity,and response-recovery time,were investigated.Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO_2 gas depended on the operating temperature,NO_2 gas concentration,thermal treatment conditions,film thickness,and so on. The mechanism of the gas-sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs(p-type) and SnO_2 (n-type) semiconductors.

An MWCNT-doped (multi-walled carbon nanotube) SnO2 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X -ray photoelectron spectroscopy, and scanning electron microscopy (SEM) characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as as sensitivity, selectivity, and response -recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO 2 gas depended on the operating temperature, NO 2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas- sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs (p-type) and SnO_2 (n-type) semiconductors.