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在大剂量氧注入硅形成ＳＩＭＯＸ（ＳｅｐａｒａｔｉｏｎｂｙＩＭｐｌａｎｔｅｄＯＸｙｇｅｎ）的物理过程分析基础上，根据单原子衬底注入过程中溅射产额与核阻止本领的本质联系，首次得到Ｏ＋对硅表面溅射产额与注入能量的简洁关系式，同时提出埋ＳｉＯ２中的氧将主要向上界面扩散，排除了以前的作者在研究ＳＩＭＯＸ材料各层厚度时采用拟合参数引起的计算不确定性．在考虑了主要的大剂量注入效应，如体积膨胀、表面溅射、氧在ＳｉＯ２内的快速扩散等，得到氧在硅中的深度分布，经过超高温退火，认为氧硅发生完全的化学分凝，据此设计出快速计算大剂量、高束流氧注入后的最终氧分布的模拟程序ＰＯＩＳＳ（ＰｒｏｇｒａｍｏｆＯｘｙｇｅｎＩｍｐｌａｎｔａｔｉｏｎｉｎｔｏＳｉｌｉｃｏｎＳｕｂｓｔｒａｔｅ），能够较为准确地反映ＳＩＭＯＸ材料的特征厚度．本程序已用于本所的ＳＩＭＯＸ材料研制中．
Based on the physical process analysis of SIMOX (Separation byIMplantedOXygen) with high dose of oxygen injection into silicon, according to the essential relationship between sputtering yield and nuclear stopping ability during single atom substrateinjection, it is the first time that O + The concordance of energy and the proposed diffusion of oxygen in the buried SiO2 mainly upwards the interface eliminates the computational uncertainty caused by the fitting parameters used by previous authors when studying the thickness of SIMOX material layers. After considering the major high-dose injection effects, such as volume expansion, surface sputtering, rapid diffusion of oxygen in SiO2 and so on, the depth distribution of oxygen in silicon was obtained. After ultra-high temperature annealing, complete chemical decondensation Based on this, POISS (Program of Oxygen Implantation of Silicon Substrate), a simulation program for rapidly calculating the final oxygen distribution of high dose and high beam oxygen injection, is designed to reflect the characteristic thickness of SIMOX material more accurately. This program has been used in the development of our SIMOX materials.