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The 60 Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells in pulse mode (programmed/erased with pulse voltage) and dc mode (programmed/erased with direct voltage sweeping) are investigated.The threshold voltage and off-state current of memory cells before and after radiation are measured.The experimental results show that the memory cells in pulse mode have a better radiation-hard capability.The normalized memory window still remains at 60％ for cells in dc mode and 76％ for cells in pulse mode after 300 krad(Si) radiation.The charge loss process physical mechanisms of programmed SONOS devices during radiation are analyzed.