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75年周态电路会议上热烈讨论的课题之一是双极型大规模集成逻辑电路。关于I~2L一类的电路发展很快。与此平行发展的另一种双极型L.S.I,已把逻辑电路的速度推进到亚毫微秒境界。这个进展是通过具有微米结深射极、低基极电阻和最小结电容的全离子注入射极耦合电路得到的。例如,西门子公司研制的一种离子注入ECL门电路,平均传播延迟时间为0.4毫微秒。电路中的晶体管其基极注入硼元素,射极注入砷元素。采用氧化隔离,减少了结电容。电路形式和图1所示的电路相类似。电路功耗在10到100毫瓦之间,并且,大约比普
One of the topics under discussion at the 75th Anniversary Circuits Conference is the Bipolar Large Scale Integrated Logic. Circuits on the I ~ 2L class developed rapidly. Another bipolar L.S.I developed in parallel with this has pushed the speed of logic circuits to the sub-nanosecond level. This progress has been made with a full ion injection emitter coupling circuit with a microjunction deep emitter, a low base resistance and a minimum junction capacitance. For example, an ion implanted ECL gate developed by Siemens has an average propagation delay of 0.4 ns. The transistors in the circuit inject boron into the base and arsenic into the emitter. Using oxide isolation, reducing the junction capacitance. The circuit form is similar to the one shown in Figure 1. The circuit consumes between 10 and 100 milliwatts, and is about the same size